Investigation of the Optical Properties in the Infrared Region of PbS Thin Films

Abstract

Thin film’s optical performance is governed by factors. These include optical and luminescent properties, and material structure. However, there are currently few domestic studies investigating these properties, especially the optical properties of thin films in the infrared region. PbS is a promising material for infrared sensing applications due to its high bandgap energy, which corresponds to the infrared spectrum. The goal of this research is to explore the optical properties of PbS thin films and understand their potential applications in infrared sensors and imaging cameras. Investigate the properties of this film through simulation and compare them with experimental results. The results demonstrate the adjustable optical properties of PbS thin films in the infrared region, highlighting the effective absorption and emission of infrared light. The absorption spectrum indicates that PbS is a suitable candidate for infrared camera sensors. The structure in the study consists of three layers: Au / PbS / MZO. The photoelectric performance of PbS film, as already investigated, achieves high conversion values in the infrared region with parameters of doping film 1017 𝑐𝑐𝑐𝑐 −3, thickness 0.2 μm, and bulk defect density 1016 𝑐𝑐𝑐𝑐 −3, temperature 300 oK. With these optimal values, when imitating, a PCE photovoltaic conversion value of up to 24% is obtained. These findings minimize the possibility of errors during the experiments and show the potential for using PbS as a promising material for various infrared applications, including infrared sensors and solar cells. Further research may focus on optimizing manufacturing processes and exploring the performance of PbS-based infrared sensors. All reported studies were conducted using the SCAPS-1D simulation platform.